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ZXMD63P03X
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
-30
-1.0
0.92
-1
100
0.185
0.27
V
μ A
nA
V
?
?
S
I D =-250 μ A, V GS =0V
V DS =-30V, V GS =0V
V GS = 20V, V DS =0V
I D =-250 μ A, V DS =V GS
V GS =-10V, I D =-1.2A
V GS =-4.5V, I D =-0.6A
V DS =-10V,I D =-0.6A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
270
80
30
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
2.6
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
4.8
13.1
9.3
7
1.2
2
ns
ns
ns
nC
nC
nC
V DD =-15V, I D =-1.2A
R G =6.2 ? , R D =6.2 ?
(Refer to test
circuit)
V DS =-24V,V GS =-10V,
I D =-1.2A
(Refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V SD
t rr
Q rr
21.4
15.7
-0.95
V
ns
nC
T j =25°C, I S =-1.2A,
V GS =0V
T j =25°C, I F =-1.2A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ? 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
4
SEMICONDUCTORS
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